VRF151G 50v, 300w, 175mhz the VRF151G is designed for broadband commercial and military applications at frequencies to 175mhz. the high power, high gain, and broadband perfor- mance of this device make possible solid state transmitters for fm broadcast or tv channel frequency bands. features improved ruggedness v (br)dss = 170v 300w with 16db typical gain @ 175mhz, 50v excellent stability & low imd common source con? guration rohs compliant 5:1 load vswr capability at speci? ed operating conditions nitride passivated refractory gold metallization high voltage replacement for mrf151g symbol parameter VRF151G unit v dss drain-source voltage 170 v i d continuous drain current @ t c = 25c 36 a v gs gate-source voltage 40 v p d total device dissipation @ t c = 25c 500 w t stg storage temperature range -65 to 150 c t j operating junction temperature 200 rf power vertical mosfet maximum ratings all ratings: t c =25 c unless otherwise speci? ed static electrical characteristics symbol parameter min typ max unit v (br)dss drain-source breakdown voltage (v gs = 0v, i d = 100ma) 170 180 v v ds(on) on state drain voltage (i d(on) = 10a, v gs = 10v) 2.0 3.0 i dss zero gate voltage drain current (v ds = 100v, v gs = 0v) 1.0 ma i gss gate-source leakage current (v ds = 20v, v ds = 0v) 1.0 a g fs forward transconductance (v ds = 10v, i d = 10a) 5.0 mhos v gs(th) gate threshold voltage (v ds = 10v, i d = 100ma) 2.9 3.6 4.4 v microsemi website - http://www.microsemi.com 050-4938 rev g 11-2009 thermal characteristics symbol characteristic min typ max unit r jc junction to case thermal resistance 0.35 c/w caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. downloaded from: http:///
0 5 10 15 20 25 30 0 2 4 6 8 10 12 0 5 10 15 20 25 0 5 10 15 20 25 VRF151G dynamic characteristics symbol parameter test conditions min typ max unit c iss input capacitance v gs = 0v 375 pf c oss output capacitance v ds = 50v 200 c rss reverse transfer capacitance f = 1mhz 12 functional characteristics symbol parameter min typ max unit g ps f = 175mhz,- v dd = 50v, i dq = 500ma, p out = 300w 14 16 db d f = 175mhz, v dd = 50v, i dq = 500ma, p out = 300w 50 55 % f = 175mhz, v dd = 50v, i dq = 500ma, p out = 300w 5:1vswr - all phase angles no degradation in output power 1. to mil-std-1311 version a, test method 2204b, two tone, reference each tone microsemi reserves the right to change, without notice, the speci? cations and information contained herein. 050-4938 rev g 11-2009 1 10 100 1 10 100 250 1.0e ? 11 1.0e ? 10 1.0e ? 9 0 10 20 30 40 50 60 c iss v ds(on ) , drain-to-source voltage (v) figure 1, output characteristics i d , drain current (a) i d , drain current (a) t j = 125c v ds , drain-to-source voltage (v) figure 3, capacitance vs drain-to-source voltage c, capacitance (f) v ds , drain-to-source voltage (v) figure 4, forward safe operating area i d , drain current (a) 5v 6v 7v 8v 9v 10v 14v v gs , gate-to-source voltage (v) figure 2, transfer characteristics 250 s pulse test<0.5 % duty cycle t j = -55c t j = 25c c oss c rss r ds(on) pd max t j = 125c t c = 75c typical performance curves i dmax v gs = 4v downloaded from: http:///
0 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 10 -5 10 -4 10 -3 10 -2 10 1.0 -1 050-4938 rev g 11-2009 0.5 single pulse 0.1 0.3 0.7 0.05 d = 0.9 peak t j = p dm x z jc + t c duty factor d = t 1 / t 2 t 2 t 1 p dm note: t 1 = pulse duration z jc , thermal impedance (c/w) rectangular pulse duration (seconds) figure 5. maximum effective transient thermal impedance junction-to-case vs pulse duration 0 50 100 150 200 250 300 350 400 0 2 4 6 8 10 output power (w pep ) input power (watts pep) figure 6. p out versus p in typical performance curves vdd=50v, idq = 250ma, freq=150mhz 150mhz VRF151G 175mhz 200mhz downloaded from: http:///
VRF151G package dimensions (inches ) all dimensions are .005 hazardous material w arning the ceramic portion of the device between leads and mounting flange is beryllium oxide. beryllium oxide dust is highly toxic when inhaled. care must be taken during handling and mounting to avoid damage to this area. these devices must never be thrown away with general industrial or domestic waste. 050-4938 rev g 11-2009 figure 7, 175 mhz test circuit + r1 c5 c4 c10 c9 bias 0?6 v input d.u.t. output + ? t2 l1 c11 c1 t1 c12 50 v l2 c1 r2 c2 c3 c6 c7 c8 ? r1 - 100 ohms, 1/2 w r2 - 1.0 k ohm, 1/2w c1 - arco 424 c3,c4,c7,c8,c9 - 1000 pf chip c5, c10 - 0.1 f chip c11 - 0.47 f ceramic chip, kemet 1215 or equivalent (100v) c12 - arco 422 l1 - 10 turns awg #18 enameled wire. close wound, 1/4 i.d. l2 - ferrite beads of suitable material for 1.5 - 2.0 h inductance unless otherwise noted, all chip capacitors are atc type 100 or equivalent. t1 - 9:1 rf transformer, can be made of 15 - 18 ohms semirigid co - ax, 62 - 90 mils o.d. t2 - 1:4 rf transformer, can be made of 16 - 18 ohms semirigid co - ax, 70 - 90 mils o.d. board material - 0.062 fiberglass (g10), 1 oz. copper clad, 2 sides, r = 5.0 note: for stability, the input transformer t1 must be loaded with ferrite toroids or beads to increase the common mode inductance. for operation below 100 mhz. the same is required for the output transformer. .435 .225 0.200 0.400 0.390 1.100 1.340 .005 .210 .860 .107 .060 .065 rad 2 pl 13 24 5 pin 1. drain 2. drain 3. gate 4. gate 5. sorce downloaded from: http:///
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